An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface

被引：4

作者：

Gandrothula, Srinivas ^{[1
]}

Kamikawa, Takeshi ^{[1
]}

Araki, Masahiro ^{[1
]}

Cohen, Daniel ^{[1
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 04期

关键词：

EPITAXIAL LATERAL OVERGROWTH; LASER-DIODE; NITRIDE; POLARIZATION; DENSITY;

D O I：

10.35848/1882-0786/ab7bc9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate removal of homoepitaxially grown semi-polar gallium nitride (GaN) layers from the native substrates. The weak link at the interface of the epitaxial lateral overgrowth and cleavable m-plane of the respective native semi-polar plane is used to separate homoepitaxial GaN from its native substrate. Homoepitaxial GaN layers of the semi-polar planes, (10 (1) over bar1), (20 (2) over bar1), (30 (3) over bar1), (10 (1) over bar1), (20 (2) over bar1), and (30 (3) over bar1) are successfully removed. This approach allows the reuse of expensive semi-polar GaN substrates, eliminating one barrier to market introduction of superior optoelectronic devices grown with semi-polar orientations. (C) 2020 The Japan Society of Applied Physics

引用

页数：5

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