Characterization of sol gel Zn1-xCaxO thin layers deposited on p-Si substrate by spin-coating method

被引：6
作者：
Fouzri, Afif [1 ,2 ]
Althumairi, Nouf Ahmed [1 ,2 ,3 ]
Sallet, Vincent [4 ]
Lusson, Alain [4 ]
机构：
[1] Imam Abdulrahman Bin Faisal Univ, Dept Phys, Coll Sci, POB 1982, Dammam 31441, Saudi Arabia
[2] Imam Abdulrahman Bin Faisal Univ, Basic & Appl Sci Res Ctr, POB 1982, Dammam 31441, Saudi Arabia
[3] Majmaah Univ, Dept Biol, Coll Educ, POB 66, Almajmaah 11952, Saudi Arabia
[4] Univ Versailles St Quentin en Yvelines, Univ Paris Saclay, CNRS, Grp Etud Matiere Condensee GEMAC, 45 Ave Etats Unis, F-78035 Versailles, France
来源：
OPTICAL MATERIALS | 2020年 / 110卷
关键词：
Zn1-xCaxO; Sol gel; Spin coating; X-ray and optical properties; DOPED ZNO NANOPARTICLES; OPTICAL-PROPERTIES; BAND-GAP; PHOTOCATALYTIC ACTIVITY; ELECTRICAL-PROPERTIES; FILMS; GROWTH; LUMINESCENCE; ENHANCEMENT; FABRICATION;
D O I：
10.1016/j.optmat.2020.110519
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films Zn1-xCaxO (0 <= x <= 6%) on a p-Si substrate are elaborated by sol-gel process and spin coating. X-ray diffraction displays a hexagonal wurtzite structure with an increase of lattice parameters confirming the substitution of Zn2+ by Ca2+. The estimation of crystallite sizes along the three main crystallographic planes is practically constant (22 nm) suggesting a spherical symmetry shape of the crystallites which is confirmed by SEM. UV-visible reflectance spectra attest a band gap tuning from 3.144 to 3.262 eV which is confirmed by the PL measurement at 2 K for Zn0.94Ca0.06O sample by the appearance of a broad band around 3.508 eV. Although the luminescence of the samples is weak, we well distinguish the free exciton emission (FXA) positioned at 3.376 eV and the bound exciton recombination ((DX)-X-0) around 3.362 eV.
引用
收藏
页数：11
相关论文
共 67 条
[1]   Non-linear optical and electrical properties of ZnO doped Ni Thin Films obtained using spray ultrasonic technique [J].
Abed, S. ;
Aida, M. S. ;
Bouchouit, K. ;
Arbaoui, A. ;
Iliopoulos, K. ;
Sahraoui, B. .
OPTICAL MATERIALS, 2011, 33 (06) :968-972
[2]   Two-step fabrication of ZnO-PVP composites with tunable visible emissions [J].
Agulto, Verdad C. ;
Empizo, Melvin John F. ;
Kawano, Keisuke ;
Minami, Yuki ;
Yamanoi, Kohei ;
Sarukura, Nobuhiko ;
Yago, Allan Christopher C. ;
Sarmago, Roland V. .
OPTICAL MATERIALS, 2018, 76 :317-322
[3]   Effect of film thickness on properties of aluminum doped zinc oxide thin films deposition on polymer substrate [J].
Akin, Nihan ;
Cetin, S. Sebnem ;
Cakmak, Mehmet ;
Memmedli, Tofig ;
Ozcelik, Suleyman .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (12) :5091-5096
[4]  
Alias MFA., 2013, Int. J. Appl. Or. Innov. Eng. Manag, V2, P198
[5]   Optical investigations on excitons bound to impurities and dislocations in ZnO [J].
Alves, H ;
Pfisterer, D ;
Zeuner, A ;
Riemann, T ;
Christen, J ;
Hofmann, DM ;
Meyer, BK .
OPTICAL MATERIALS, 2003, 23 (1-2) :33-37
[6]   Tuning optical band gap of vertically aligned ZnO nanowire arrays grown by homoepitaxial electrodeposition [J].
Anthony, Savarimuthu Philip ;
Lee, Jeong In ;
Kim, Jin Kon .
APPLIED PHYSICS LETTERS, 2007, 90 (10)
[7]   First-principles study of optical properties in Ca-doped ZnO alloys [J].
Bai, Li-Na ;
Lian, Jian-She ;
Zheng, Wei-Tao ;
Jiang, Qing .
CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2012, 10 (05) :1144-1149
[8]  
Bari AR, 2009, INDIAN J PURE AP PHY, V47, P24
[9]   High mobility transparent conducting oxides for thin film solar cells [J].
Calnan, S. ;
Tiwari, A. N. .
THIN SOLID FILMS, 2010, 518 (07) :1839-1849
[10]   Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition [J].
Cao, B. Q. ;
Lorenz, M. ;
Rahm, A. ;
von Wenckstern, H. ;
Czekalla, C. ;
Lenzner, J. ;
Benndorf, G. ;
Grundmann, M. .
NANOTECHNOLOGY, 2007, 18 (45)
1234567