Bismuth precursors for atomic layer deposition of bismuth-containing oxide films

被引：72
|
作者：
Vehkamäki, M [1 ]
Hatanpää, T [1 ]
Ritala, M [1 ]
Leskelä, M [1 ]
机构：
[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2004年 / 14卷 / 21期
关键词：
D O I：
10.1039/b405891g
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Several bismuth amides and a bismuth thioamidate compound were synthesized and characterized in order to find volatile bismuth precursors for atomic layer deposition (ALD) of oxide materials. Crystal structures of Bi(N(SiMe3)(2))(3) and Bi(SC(Me)NPri)(3) are reported. Based on precursor characterization Bi(N(SiMe3)(2))(3) was selected for film deposition experiments. It was found that alternate surface reactions of Bi(N(SiMe3)(2))(3) and H2O can be used for ALD of amorphous BiOx, Bi-Ta-O and Sr-Bi-Ta-O at 190-200 degreesC. After post-deposition annealing at 800 degreesC in oxygen the SrBi2Ta2O9 layered perovskite phase was obtained.
引用
收藏
页码：3191 / 3197
页数：7
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