Modelling of Supercontinuum Generation in the Germanium-on-Silicon Waveguided Platform

被引：15
作者：
De Leonardis, Francesco [1 ]
Troia, Benedetto [1 ]
Soref, Richard A. [2 ]
Passaro, Vittorio M. N. [1 ]
机构：
[1] Politecn Bari, Dept Elect & Informat Engn, Photon Res Grp, I-70125 Bari, Italy
[2] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2015年 / 33卷 / 21期
关键词：
Germanium technology; nonlinear optical devices; optical waveguides; supercontinuum generation; DISPERSION;
D O I：
10.1109/JLT.2015.2474133
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of high-order susceptibilities on the supercontinuum generation process in germanium-on-silicon waveguides has been investigated in detail in the midinfrared. The frequency dispersion of both the three-photon absorption coefficient and the real part of the fifth-order susceptibility has been investigated in order to develop a self-consistent modeling based upon a generalized nonlinear Schrodinger equation. Numerical results demonstrate that germanium-on-silicon waveguides can be used to induce supercontinuum generation over 1.34-mu m-wide bandwidth with 200-fs input pulses pumped at a wavelength of 4 mu m with peak pump powers of 89 W and waveguide lengths of 4.6 mm. The soliton fission process has also been observed as it is the main mechanism behind the supercontinuum generation.
引用
收藏
页码：4437 / 4444
页数：8
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