Room temperature adsorption of Cs on Si(111)-(7x7) studied by optical second-harmonic generation

被引：14

作者：

Hansen, PE ^{[1
]}

Pedersen, K ^{[1
]}

Liu, L ^{[1
]}

Morgen, P ^{[1
]}

机构：

[1] ODENSE UNIV,DEPT PHYS,ODENSE M,DENMARK

来源：

SURFACE SCIENCE | 1997年 / 391卷 / 1-3期

关键词：

alkali metals; second harmonic generation; silicon surfaces;

D O I：

10.1016/S0039-6028(97)00489-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Room temperature adsorption of Cs on Si(111)-(7 x 7) has been followed continuously with second-harmonic generation during the evaporation process at several photon energies. The resonances of the clean (7 x 7) surface decay and new resonances involving Cs-induced states are observed below the monolayer coverage. The resonances at different coverages are discussed in terms of surface and interface states as they are know from photoemission, with good agreement between the techniques. Continued evaporation at monolayer coverage leads to an increasing polarizability perpendicular to the surface which - if the evaporation is stopped - rapidly decays to a lower saturation level. This is explained in terms of multipole plasmons in a thin metallic Cs film, of a thickness just above a monolayer, sustained during continuous evaporation. (C) 1997 Elsevier Science B.V.

引用

页码：252 / 259

页数：8

共 50 条

[31] Electroless deposition of Au onto Si(111) studied by surface second harmonic generation [J].

Srinivasan, R ;

Suni, II .

SURFACE SCIENCE, 1998, 408 (1-3) :L698-L702

[32] Competing Pathways in N-Allylurea Adsorption on Si(111)-(7 x 7) [J].

De Renzi, Valentina ;

Arnaud, Gaelle F. ;

del Pennino, Umberto .

JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (09) :5673-5680

[33] Initial reactive sticking coefficient of O-2 on Si(111)-7x7 at elevated temperatures [J].

Shklyaev, AA ;

Suzuki, T .

SURFACE SCIENCE, 1996, 351 (1-3) :64-74

[34] A study of ion-implanted Si(111) and Si(111) silicon oxide by optical second harmonic generation [J].

Kravetsky, IV ;

Kulyuk, LL ;

McGilp, JF ;

Cavanagh, M ;

Chandola, S ;

Boness, J ;

Marowsky, G ;

Harbsmeier, F .

SURFACE SCIENCE, 1998, 402 (1-3) :542-546

[35] Improved ab initio calculation of surface second-harmonic generation from Si(111)(1x1):H [J].

Anderson, Sean M. ;

Tancogne-Dejean, Nicolas ;

Mendoza, Bernardo S. ;

Veniard, Valerie .

PHYSICAL REVIEW B, 2016, 93 (23)

[36] Ab initio study of atomic oxygen adsorption on the Si(111)7 x 7 surface [J].

Caldas, MJ ;

Baierle, RJ ;

Capaz, RB ;

Artacho, E .

PHYSICA B-CONDENSED MATTER, 2001, 308 :329-332

[37] Optical second-harmonic generation study of incorporation of nitrogen atoms at Si(100) surfaces [J].

Tsurumaki, H. ;

Kuroki, E. ;

Ishida, H. ;

Tohara, Y. ;

Namiki, A. .

SURFACE SCIENCE, 2007, 601 (19) :4629-4635

[38] Influences of H on the Adsorption of a Single Ag Atom on Si(111)-7 x 7 Surface [J].

Lin, Xiu-Zhu ;

Li, Jing ;

Wu, Qi-Hui .

NANOSCALE RESEARCH LETTERS, 2010, 5 (01) :143-148

[39] Second-harmonic generation of semiconductor quantum dots studied by near-field optical microscopy [J].

Bryant, GW ;

Liu, AS .

SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) :361-365

[40] FABRICATION OF ATOMIC-SCALE STRUCTURES ON SI(111)-7X7 USING A SCANNING TUNNELING MICROSCOPE (STM) [J].

HUANG, DH ;

UCHIDA, H ;

AONO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B) :4501-4503

← 1 2 3 4 5 →