Structure and ferro/piezoelectric properties of SrBi4Ti4O15 films deposited on TiO2 buffer layer

被引：7

作者：

Simoes, A. Z. ^{[1
]}

Aguiar, E. C. ^{[2
]}

Riccardi, C. S. ^{[2
]}

Moura, F. ^{[2
]}

Longo, E. ^{[2
]}

Varela, J. A. ^{[2
]}

机构：

[1] Univ Fed Itajuba Unifei, BR-3590037 Itabira, MG, Brazil

[2] Univ Estadual Paulista, Lab Interdisciplinar Ceram, Dept Quim Fis, Inst Quim, BR-14800900 Araraquara, SP, Brazil

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 477卷 / 1-2期

基金：

巴西圣保罗研究基金会;

关键词：

Thin films; Buffer layer; Bismuth layered compounds; FERROELECTRIC THIN-FILMS; POLARIZATION; CERAMICS;

D O I：

10.1016/j.jallcom.2008.10.138

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

TiO2 buffer layer was introduced between SrBi4Ti4O15 (SBTi) thin films and Pt bottom electrodes through the soft chemical solution. The obtained films were characterized by X-ray diffraction, atomic force microscopy and electrical properties. Unlike thin film crystallized directly onto a highly (1 1 1)-oriented Pt bottom electrode, the thin film on TiO2 buffer layer was a single phase perovskite with random orientation. The dielectric and ferroelectric properties of the SBTi/TiO2 thin films deposited on Pt coated Si substrates are evaluated, leading to the potential of the TiO2 buffer layer for the integrated devices. Meanwhile, SBTi thin films deposited directly on (1 1 1) Pt bottom electrode reveal a weak ferroelectricity along c-axis direction. (C) 2008 Published by Elsevier B.V.

引用

页码：85 / 89

页数：5

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