Oxygen codoping of ZnS:Tb,F electroluminescent thin film

被引:12
作者
Kim, JP
Davidson, MR
Puga-Lambers, M
Lambers, E
Holloway, PH
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, MICROFABRITECH, Gainesville, FL 32611 USA
关键词
electroluminescence; phosphor; sputter deposition; ZnS : TbOF; thin film;
D O I
10.1016/j.jlumin.2003.12.054
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Thin films of ZnS:Tb,F were sputter deposited from a ZnS:TbF3 target in an oxygen-argon ambient. The highest electroluminescent brightness (82 cd/m(2) at 60 Hz) was measured from ZnS:Tb,F films with a 3.6 at% oxygen concentration. Oxygen concentrations above or below this concentration resulted in sharp decreases in brightness (56 cd/m(2) at 2.2 at% oxygen, and 42 cd/m(2) at 8.1 at% oxygen). The brightness improvement by oxygen codoping between 0 and 3.6 at% results from increased conduction charge with increasing oxygen concentrations. The brightness decrease for oxygen >3.6 at% is attributed to decreases of both excitation and radiative efficiencies. Improved electroluminescent brightness from oxygen codoping during sputter deposition of ZnS:Tb,F films was equivalent to the improvement observed in films deposited from a ZnS:TbOF target. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:75 / 83
页数:9
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