High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays

被引：17

作者：

Kettler, Thorsten ^{[1
]}

Posilovic, Kristijan ^{[1
]}

Karachinsky, Leonid Ya ^{[1
]}

Ressel, Peter ^{[2
]}

Ginolas, Arnim ^{[2
]}

Fricke, Joerg ^{[2
]}

Pohl, Udo W. ^{[1
]}

Shchukin, Vitaly A. ^{[1
]}

Ledentsov, Nikolai N. ^{[1
,3
]}

Bimberg, Dieter ^{[1
]}

Joensson, Jan ^{[4
]}

Weyers, Markus ^{[2
]}

Erbert, Goetz ^{[2
]}

Traenkle, Guenther ^{[2
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[2] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

[3] VI Syst GmbH, D-10623 Berlin, Germany

[4] Three Five Epitaxial Serv AG TESAG, D-12489 Berlin, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期

关键词：

High brightness; high-power lasers; photonic band crystal; semiconductor laser arrays; semiconductor lasers; single-mode semiconductor lasers;

D O I：

10.1109/JSTQE.2009.2013179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lasers with a waveguide based on a longitudinal photonic band crystal designed for 850 nm emission are investigated. They demonstrate ultranarrow vertical beam divergence of about 7 degrees full-width at half maximum without using corrective optics. A high internal efficiency of 93% is achieved. Broad-area 50-mu m-wide stripe lasers with unpassivated facets show a high total output power of about 20 W in pulsed mode with far-field divergences of 9.5 degrees and 11.3 degrees of the slow and fast axis, respectively, equivalent to an ultrahigh brightness of 3 x 10(8) W.cm(-2) .sr-(1) and a low aspect ratio of only 1.2. Narrow ridge lasers with 5 mu m stripes demonstrate more than 1.5 W maximum output power in continuous-wave operation. Large arrays with up to 256 uncoupled single-mode laser diodes demonstrate low threshold currents of about 70 mA per laser, independent of the number of lasers in the array.

引用

页码：901 / 908

页数：8

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