Transference Numbers for In-Plane Carrier Conduction in Thin Film Nanostructured Gadolinia-Doped Ceria Under Varying Oxygen Partial Pressure

被引：7

作者：

Podpirka, Adrian ^{[1
]}

Ramanathan, Shriram ^{[1
]}

机构：

[1] Harvard Univ, Harvard Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2009年 / 92卷 / 10期

关键词：

WAGNER POLARIZATION METHOD; ELECTRICAL-CONDUCTIVITY; NANOCRYSTALLINE CERIA; IONIC-CONDUCTIVITY; MIXED CONDUCTORS; GRAIN-BOUNDARIES; ZIRCONIA; SEGREGATION; IMPEDANCE; TRANSPORT;

D O I：

10.1111/j.1551-2916.2009.03200.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate a modified Hebb-Wagner approach to quantitatively estimate transference numbers for carrier conduction in thin film oxide conductors using blocking electrodes in an in-plane geometry. We report ionic transference numbers, t(i), for gadolinia-doped ceria (GDC) thin films, a model mixed ionelectron conductor, at 973K and oxygen partial pressure ranging from 0.21 atm down to approximately 10(-22) atm. Our results indicate that GDC reaches the electrolytic regime (t(i)=0.5) at an oxygen partial pressure of 5 x 10(-19) atm at 973K. This approach may be useful for understanding carrier transport mechanisms in low-dimensional oxide heterostructures with specific relevance to nanostructured energy materials.

引用

页码：2400 / 2403

页数：4