Design of vertical type thermal GVD reactor with rotating-disk for new generation semiconductor processes

By using the commercial CFD code, FLUENT, the analysis of a heat and mass transfer phenomena was done. This study extends the numerical simulation of the 8inch rotational deposition surface reactor to the 12inch surface case, where the thermal chemical vapor deposition (CVD) method is employed. The effects to enlarge the rotating surface for the deposition uniformity are to be investigated based on the heat and mass transfer analysis within the reactor. In order to design the next generation reactor, the inlet velocity, the diameter and the rotational speed of the deposition surface, and the shape of the reactor are used as the influencing parameters. In this simulation, the source gas is assumed as the silane (SiH4) and the carrier gas is assumed as H-2. The chemical properties are obtained from the article of Jasinsky and Childs. The phenomena of rotation and buoyancy flow were investigated. The deposition rate is increased along the radial direction for the buoyancy flow region, and they were more centered for the rotation-flow region where the large recirculation-flow was a dominant.