Strong electron irradiation hardness of 852 nm Al-free laser diodes

被引：2
|
作者：
Boutillier, M.
Gauthier-Lafaye, O.
Bonnefont, S.
Lozes-Dupuy, F.
Vermersch, F-J.
Krakowski, M.
Gilard, O.
机构：
[1] CNRS, LAAS, F-31077 Toulouse 4, France
[2] Thales Res & Technol, Lab III V, F-91767 Palaiseau, France
[3] CNES, F-31401 Toulouse 4, France
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2006.07.049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have step-irradiated Al-free laser diodes with 1 MeV electrons at fluences from 10(14) Up to 10(16) electrons/cm(2). We measure at each step their L-I and I-V characteristics to evaluate the impact of irradiation on optical and electrical properties. We also irradiated a test structure incorporating 3 GaInAsP quantum wells and a thick GaInP cladding. Quantum wells photoluminescence measurements show a strong degradation of its intensity. However laser diodes properties remain essentially unchanged, due to a strong forward bias annealing effect.
引用
收藏
页码：1715 / 1719
页数：5
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