Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

We have characterized the total ionizing dose response of strained Ge pMOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO2) show minimal transconductance degradation (less than 5%), very small V-th shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge pMOS FinFETs is far superior to that of past generations of planar Ge pMOS devices. These improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.