FIB patterning of dielectric, metallized and graphene membranes: A comparative study

被引:24
作者
Hemamouche, A. [1 ]
Morin, A. [1 ]
Bourhis, E. [1 ]
Toury, B. [2 ]
Tarnaud, E. [3 ]
Mathe, J. [3 ]
Guegan, P. [7 ]
Madouri, A. [1 ]
Lafosse, X. [1 ]
Ulysse, C. [1 ]
Gullet, S. [1 ]
Patriarche, G. [1 ]
Auvray, L. [4 ]
Montel, F. [4 ]
Wilmart, Q. [5 ]
Placais, B. [5 ]
Yates, J. [6 ]
Gierak, J. [1 ]
机构
[1] LPN CNRS, F-91460 Marcoussis, France
[2] Univ Lyon 1, UMR 5615, Lab Multimat & Interfaces, F-69100 Villeurbanne, France
[3] Univ dEvry Val dEssonne, LAMBE CNRS UEVE CEA, Evry, France
[4] Paris Diderot Univ, UMR 7057, Paris, France
[5] ENS, Dept Phys, Lab Pierre Aigrain, F-75005 Paris, France
[6] ITQB UNL, Lab Single Mol Proc, P-2780157 Oeiras, Portugal
[7] UPMC3, UMR 7610, Lab Chim Polymeres, F-94200 Ivry, France
关键词
FIB; Ultra-thin membranes; Dielectric films; Graphene; Nanopores; Boron nitride; NANOPORES;
D O I
10.1016/j.mee.2014.03.020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fabrication of nanopores and nanomaslcs has recently emerged as an area of considerable interest for research applications ranging from optics, to electronics and to biophysics. In this work we evaluate and compare the fabrication of nanopores, using a finely focused gallium beam, in free-standing membranes/films made of Si, SiN, and SiO2 (having thicknesses of a few tens of nanometers) and also in graphene and hexagonal boron nitride (h-BN) atomically thin suspended sheets. Mechanical resistance, charging effects and patterning performances are evaluated and compared. In spite of the very different properties of the membranes we report that reproducible nanopore fabrication in the sub-10 nm range can be achieved in both amorphous and atomically thin sheets using Ga+ focused ion beams (FIB). (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:87 / 91
页数:5
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