Surface photovoltage analysis of crystalline silicon for photovoltaic applications

被引：16
作者：
Castaldini, A
Cavalcoli, D
Cavallini, A
Rossi, M
机构：
[1] INFM, I-40127 Bologna, Italy
[2] Dept Phys, I-40127 Bologna, Italy
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 72卷 / 1-4期
关键词：
minority carrier diffusion length; surface photovoltage; multicrystalline Si;
D O I：
10.1016/S0927-0248(01)00205-7
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Surface photovoltage (SPV) method for the characterization of multicrystalline silicon material for photovoltaic applications has been investigated, in view of its application as in-line characterization tool in photovoltaic industry. Minority carrier diffusion lengths have been measured by SPV on as-grown multicrystalline Si wafers as well as on emitter diffused multicrystalline Si wafers, showing the capability and the flexibility of the method. The usual assumptions for SPV data analyses have been critically discussed. The SPV values of diffusion length have been related with material characteristics and process control. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：559 / 569
页数：11
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