A reversible first-order dispersive model of parametric instability

被引：4
作者：
Alagi, Filippo [1 ]
Rossetti, Mattia [1 ]
Stella, Roberto [1 ]
Vigano, Emanuele [1 ]
机构：
[1] STMicroelectronics, Via Tolomeo 1, I-20010 Cornaredo, MI, Italy
来源：
MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 03期
关键词：
AGING MODEL;
D O I：
10.1016/j.microrel.2013.10.020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A general purpose instability model is derived for the variation of device parameters which is related to the activation-deactivation of statistically independent microscopic defects, with reversible first-order reaction kinetics and distributed rate constants. The model is aimed at predicting the parametric instability of electronic devices under periodic AC stimulus of arbitrary waveform over a wide time-scale range covering the whole device lifetime. As a practical application, we extracted a model for the negative-bias temperature instability of a p-channel type silicon MOSFET, including both the recovery effects and the voltage-temperature dependence. The model can be implemented in commercially available tools for the compact simulation of integrated circuits. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：561 / 569
页数：9
相关论文
共 15 条
  • [1] A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs
    Alagi, F.
    [J]. MICROELECTRONICS RELIABILITY, 2011, 51 (02) : 321 - 325
  • [2] Aging Model for a 40 V Nch MOS, Based on an Innovative Approach
    Alagi, Filippo
    Stella, Roberto
    Vigano, Emanuele
    [J]. IETE JOURNAL OF RESEARCH, 2012, 58 (03) : 191 - 196
  • [3] [Anonymous], 2011, P IEEE INT REL PHYS
  • [4] On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's
    Denais, M
    Bravaix, A
    Huard, V
    Parthasarathy, C
    Ribes, G
    Perrier, F
    Rey-Tauriac, Y
    Revil, N
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 109 - 112
  • [5] On the Frequency Dependence of the Bias Temperature Instability
    Grasser, T.
    Kaczer, B.
    Reisinger, H.
    Wagner, P-J.
    Toledano-Luque, M.
    [J]. 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,
  • [6] Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps
    Grasser, T.
    Wagner, P. -J.
    Reisinger, H.
    Aichinger, Th
    Pobegen, G.
    Nelhiebel, M.
    Kaczer, B.
    [J]. 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
  • [7] The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability
    Grasser, T.
    Reisinger, H.
    Wagner, P. -J.
    Schanovsky, F.
    Goes, W.
    Kaczer, B.
    [J]. 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 16 - 25
  • [8] Two independent components modeling for Negative Bias Temperature Instability
    Huard, Vincent
    [J]. 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 33 - 42
  • [9] A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS Dielectrics
    Ielmini, Daniele
    Manigrasso, Mariaflavia
    Gattel, Francesco
    Valentini, Maria Grazia
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (09) : 1943 - 1952
  • [10] Essential Aspects of Negative Bias Temperature Instability (NBTI)
    Islam, Ahmad Ehteshamul
    Mahapatra, Souvik
    Deora, Shweta
    Maheta, Vrajesh D.
    Alam, Muhammad Ashraful
    [J]. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 2011, 35 (04): : 145 - 174
12