Simulation model of multi-junction InxGa1-xN Solar Cells

被引：0

作者：

Aziz, Wisam J. ^{[1
]}

Ibrahim, K. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, Nanooptoelect Res Technol Lab, George Town 11800, Malaysia

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 07期

关键词：

III-V materials; Multi-junction Solar cells; High efficiency;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this model we investigate theoretically the characteristics of multi junction InxGa1-xN series-connected solar cells under air mass 1.5 global irradiance spectrum using Matlab program. The doping levels of p-type and n-type were 5 x 10(18) cm(-3) and 1 x 10(18) cm(-3) respectively. The efficiency is found to be varied from 18.01% for single junction to 42.55% for five junctions. The enhancement in V-OC was observed from the lower values of total thickness.

引用

页码：1033 / 1037

页数：5

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