X-ray microdiffraction: local stress distributions in polycrystalline and epitaxial thin films

被引:19
作者
Phillips, MA
Spolenak, R
Tamura, N
Brown, WL
MacDowell, AA
Celestre, RS
Padmore, HA
Batterman, BW
Arzt, E
Patel, JR
机构
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] LBNL, Adv Light Source, Berkeley, CA 94720 USA
[3] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
[4] Stanford Univ, Stanford Linear Accelerator Ctr, SSRL, Stanford, CA 94309 USA
[5] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
microdiffraction; thin films; Al; Cu; Al-Cu; plasticity; size effects; synchrotron; stress measurement;
D O I
10.1016/j.mee.2003.12.053
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
When investigated by X-ray microdiffraction, the stress states in thin metal films are found to be more complex than as assumed by the simple models that have been formulated to describe their behavior. In this paper, the local differences in stress have been measured in a polycrystalline Al(0.5 wt% Cu) film on Si and an epitaxial Cu film on Al2O3. Significant differences in stress state are apparent between grains, but also within grains. While both types of film display a local variation in residual stress state, the width of the distribution is much broader in the polycrystalline film. The reasons for this are discussed in terms of grain size distribution and dislocation nucleation. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:117 / 126
页数:10
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