Memristor-Based Circuit Design Approaches and Future Challenges

被引:0
|
作者
Kumar, Ramesh [1 ]
Mandal, Surajit [1 ]
机构
[1] BP Poddar Inst Management & Technol, Kolkata 700052, India
关键词
TiO2; memristor; Memristor modeling; PSPICE; Memristor applications; MODEL;
D O I
10.1007/978-981-32-9453-0_4
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
Memristor is a two-terminal element which remembers its most recent memristance or history, and is characterized by its nonlinear relation between charge and magnetic flux and hysteresis loop in the current versus voltage plane. Memristor which is investigated as the fourth basic passive element the other three are resistor, capacitor, and inductor. With the increase of research interest in memristor, it is promising potential in developing the future memory devices. Here, we review the memristor science and connected technology and discuss different aspects of the memristor. The memristor circuit design using its equivalent PSPICE memristor model is presented and time diagrams are obtained. Memristors behavior with other passive element like resistor and its interrelation is investigated. Here, we cover principles of memristors systems, useful models ofmemristors, practical memristors circuit implementations, and highlighted prospective utilization of memristors using the passive circuit elements like resistor. The related characteristics and the future challenges of memristors are discussed in this communication.
引用
收藏
页码:31 / 41
页数:11
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