Electronic properties of Ga-In-Zn-O (GIZO) thin films: Effect of post-annealing

被引：3

作者：

Tahir, Dahlang ^{[1
]}

Park, Nam Seok ^{[2
]}

Yang, Dong-Seok ^{[3
]}

Kang, Hee Jae ^{[4
]}

机构：

[1] Hasanuddin Univ, Dept Phys, Makassar 90245, Indonesia

[2] Chungbuk Hlth & Sci Univ, Dept Semicond Elect Engn, Cheongju 28150, South Korea

[3] Chungbuk Natl Univ, Dept Phys Educ, Coll Educ, Cheongju 28644, South Korea

[4] Chungbuk Natl Univ, Dept Phys, Cheongju 28644, South Korea

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2019年 / 234卷

关键词：

REELS; XPS; EXAFS; GIZO; Electronic properties; ELECTRICAL CHARACTERISTICS; TRANSPORT; MOBILITY; RATIO;

D O I：

10.1016/j.elspec.2019.05.002

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Effect of post annealing temperature on electronic properties of Ga-In-Zn-O (GIZO) have quantitatively studied by using reflection electron energy loss spectroscopy (REELS), x-ray photoelectron spectroscopy (XPS), and x-ray absorption fine structure (XAFS) spectra. The band gap values of GIZO are 3.1 eV, 3.5 eV, and 3.8 eV, at room temperature (as deposited), post-annealing at 600 degrees C, and 700 degrees C, respectively. The composition of Ga increased and Zn reduced with increasing post-annealing temperature. The formation of Ga-(Ga,Zn) and Zn-(Zn,Ga) bonds in GIZO thin film annealed at 700 degrees C was confirmed by XAFS study. The electronic properties of GIZO thin films strongly affected by the bonding formation of Zn-O and Ga-O as the effect of annealing temperature.

引用

页码：1 / 4

页数：4

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