Highly sensitive ion-sensitive field-effect transistor sensor using fully transparent amorphous In-Ga-Zn-O thin-film transistors

被引：13

作者：

Ahn, Min-Ju ^{[1
]}

Lim, Cheol-Min ^{[1
]}

Cho, Won-Ju ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, 447-1 Wolgye Dong, Seoul 139701, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

ion-sensitive field-effect transistor (ISFET); In-Ga-Zn-O (IGZO); dual gate (DG); capacitive coupling; OXIDE; ENHANCEMENT; MODEL;

D O I：

10.1088/1361-6641/aa5138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a highly sensitive ion-sensitive field-effect transistor (ISFET) sensor was developed using fully transparent amorphous In-Ga-Zn-O thin-film transistors fabricated on a glass substrate. To overcome the issues associated with conventional ISFETs, such as low sensitivity and poor reliability, a dual-gate (DG) operating mode was employed, which is able to significantly amplify the sensitivity through capacitive coupling between the front and back gate dielectrics. As a result, when compared to the sensitivity in the single-gate mode, the DG mode exhibited a high sensitivity of 269.3 mV/pH, which is beyond the Nernst response limit.

引用

页数：7

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