High performance energy efficient radiation hardened latch for low voltage applications

被引:9
作者
Kumar, Chaudhry Indra [1 ]
Bulusu, Anand [1 ]
机构
[1] Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee, Uttar Pradesh, India
关键词
Energy efficient latches; Radiation hardening latch; Single event upset (SEU); Soft error; Transient fault; CMOS; DESIGN;
D O I
10.1016/j.vlsi.2019.02.004
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Energy efficiency is considered to be the most critical design parameter for IoT and other ultra low power applications. However, energy efficient circuits show a lesser immunity against soft error, because of the smaller device node capacitances in nanoscale technologies and near-threshold voltage operation. Due to these reasons, the tolerance of the sequential circuits to SEUs is an important consideration in nanoscale near threshold CMOS design. This paper presents an energy efficient SEU tolerant latch. The proposed latch improves the SEU tolerance by using a clocked Muller- C and memory elements based restorer circuit. The parasitic extracted simulations using STMicroelectronics 65 nm CMOS technology show that by employing the proposed latch, an average improvement of similar to 40% in energy delay product (EDP), is obtained over the recently reported latch. Moreover, the proposed latch is also validated in a TCAD calibrated PTM 32 nm framework and PTM 22 nm CMOS technology nodes. In 32 nm and 22 nm technologies, the proposed latch improves the EDP similar to 12% and 59% over existing latches respectively.
引用
收藏
页码:119 / 127
页数:9
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