Growth of single phase GaAs1-xNx with high nitrogen concentration by metal-organic molecular beam epitaxy

被引：52

作者：

Qiu, Y ^{[1
]}

Nikishin, SA ^{[1
]}

Temkin, H ^{[1
]}

Faleev, NN ^{[1
]}

Kudriavtsev, YA ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 24期

关键词：

D O I：

10.1063/1.119137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality layers of GaAs1-xNx were grown on (001)GaAs by metal-organic molecular beam epitaxy. The growth conditions, and especially the nitrogen to arsenic flux ratio, were carefully explored to assure epitaxial crystal growth. We show well behaved and reproducible growth of single phase GaAs1-xNx with the GaN mole fraction as high as x = 0.10. The nitrogen content of epitaxial layers was determined directly by secondary ion mass spectroscopy and high resolution x-ray diffraction. (C) 1997 American Institute of Physics.

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页码：3242 / 3244

页数：3

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