Magnetoelastic stress in Cu/Ni/Cu/Si(100) epitaxial thin films

被引：9
作者：
Ciria, M [1 ]
Arnaudas, JI
del Moral, A
O'Handley, RC
机构：
[1] Univ Zaragoza, Dept Fis Mat Condensada, Dept Magnetismo, Zaragoza, Spain
[2] Univ Zaragoza, Inst Ciencia Mat Aragon, Zaragoza, Spain
[3] CSIC, Zaragoza, Spain
[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
PHYSICAL REVIEW B | 2004年 / 70卷 / 05期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1103/PhysRevB.70.054431
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetoelastic (ME) stresses for a series of Cu/Ni(t(Ni))/Cu/Si(001) epitaxial films are reported. The direct measurement of the stresses in the (001) plane allows determination of the irreducible ME stress B-eff(gamma,2) that accounts for the breaking of the in-plane square symmetry. B-eff(gamma,2) has been determined as a function of the applied magnetic field (+/-15 kOe) and the temperature (300-10 K) for t(Ni) ranging from 5 to 15 nm. The temperature dependence of B-eff(gamma,2) is proportional to the square power of the reduced magnetization and the 0 K value increases with the internal stress. These experimental observations are explained considering the tetragonal distortion of the nickel caused by the epitaxial strain that the copper lattice introduces in the nickel layers.
引用
收藏
页码：054431 / 1
页数：6
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