Uncooled (25-85°C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate

被引：18

作者：

Arai, M. ^{[1
]}

Tadokoro, T. ^{[1
]}

Fujisawa, T. ^{[1
]}

Kobayashi, W. ^{[1
]}

Nakashima, K. ^{[1
]}

Yuda, M. ^{[1
]}

Kondo, Y. ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 07期

关键词：

QUANTUM-WELL LASERS;

D O I：

10.1049/el.2009.0263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first direct modulation of a 1.3 mu m-range metamorphic laser diode on a GaAs substrate has been realised. A 200 mu m-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85 degrees C, respectively. This laser also achieved 10 Gbit/s direct modulation up to 85 degrees C.

引用

页码：359 / U27

页数：2

共 4 条

[1] High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate [J].