Single crystal growth of GaN by the temperature gradient Na flux method

被引：23
作者：
Aoki, M
Yamane, H
Shimada, M
Sarayama, S
Iwata, H
DiSalvo, FJ
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
[3] Ricoh Co Ltd, Res & Dev Grp, R&D Ctr, Dept 1, Takadate, Natori 9811241, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 266卷 / 04期
基金：
日本学术振兴会;
关键词：
growth from solutions; single crystal growth; gallium compounds; nitrides; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2004.03.035
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800degreesC). Colorless transparent platelet single crystals having a size of about 2 mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0 0 0 2) reflection of the crystals was 40-60 arcsec, showing that the crystals have a good quality. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：461 / 466
页数：6
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