Single crystal growth of GaN by the temperature gradient Na flux method

被引：24

作者：

Aoki, M

Yamane, H

Shimada, M

Sarayama, S

Iwata, H

DiSalvo, FJ

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[3] Ricoh Co Ltd, Res & Dev Grp, R&D Ctr, Dept 1, Takadate, Natori 9811241, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 266卷 / 04期

基金：

日本学术振兴会;

关键词：

growth from solutions; single crystal growth; gallium compounds; nitrides; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2004.03.035

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800degreesC). Colorless transparent platelet single crystals having a size of about 2 mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0 0 0 2) reflection of the crystals was 40-60 arcsec, showing that the crystals have a good quality. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：461 / 466

页数：6

共 22 条

[1] Growth of GaN single crystals from a Na-Ga melt at 750°C and 5 MPa of N2 [J].