Quadruple-junction thin-film silicon-based solar cells with high open-circuit voltage

被引：45

作者：

Si, Fai Tong ^{[1
]}

Kim, Do Yun ^{[1
]}

Santbergen, Rudi ^{[1
]}

Tan, Hairen ^{[1
]}

van Swaaij, Rene A. C. M. M. ^{[1
]}

Smets, Arno H. M. ^{[1
]}

Isabella, Olindo ^{[1
]}

Zeman, Miro ^{[1
]}

机构：

[1] Delft Univ Technol, Lab Photovolta Mat & Devices, NL-2628 CD Delft, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 06期

关键词：

DETAILED BALANCE LIMIT; EFFICIENCY;

D O I：

10.1063/1.4892890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a-SiOx:H/a-Si:H/nc-Si:H/nc-Si:H quadruple-junction thin-film silicon-based solar cells (4J TFSSCs) to obtain high spectral utilization and high voltages. By processing the solar cells on micro-textured superstrates, extremely high open-circuit voltages for photovoltaic technology based on thin-film silicon alloys up to 2.91V have been achieved. Optical simulations of quadruple-junction solar cells using an advanced in-house model are a crucial tool to effectively tackle the challenging task of current matching among the individual sub-cells in such devices. After optimizing the optical design of the device and the absorber thicknesses, an energy conversion efficiency of 11.4% has been achieved. The open-circuit voltage, short-circuit current density, and fill factor were 2.82V, 5.49mA/cm(2), and 73.9%, respectively. Based on this demonstration, strategies for further development of highly efficient 4J TFSSCs are proposed. (c) 2014 AIP Publishing LLC.

引用

页数：5

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