Features of the Properties of Rare-Earth Semiconductors

被引：5
|
作者：
Kaminski, V. V. [1 ]
Sharenkova, N. V. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 02期
关键词：
D O I：
10.1134/S106378261902012X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown that the unique features of the physical properties of rare-earth semiconductor compounds are based on the small values of the ionization potentials of the rare-earth elements included in them. The reason for this is the presence of 4f shells in the electronic structure of the elements.
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页码：150 / 152
页数：3
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