Sputter deposition and characterization of Mn3CuN thin films

被引:9
作者
Aoyama, Masahiro [1 ]
Takenaka, Koshi [1 ]
Ikuta, Hiroshi [1 ]
机构
[1] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
关键词
Mn3CuN; Thin film; Ferromagnetic shape-memory alloy; Magnetic anisotropy; Magnetron sputtering; SUPERCONDUCTING BULK MAGNET; FIELD-INDUCED STRAIN; TRANSFORMATION; MANGANESE; PHASE;
D O I
10.1016/j.jallcom.2011.12.110
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A systematic study on thin film preparation by means of reactive magnetron sputtering was carried out for an antiperovskite manganese compound Mn3CuN, a recently discovered ferromagnetic shape-memory alloy. We obtained a (1 1 1) oriented thin film that possesses a ferromagnetic transition temperature similar to stoichiometric bulk samples on an yttria-stabilized zirconia (YSZ) substrate. On the other hand, (1 0 0) oriented thin films were obtained on MgO substrates while the thin films were deficient in nitrogen. The correlation between the sputtering parameters and nitrogen deficiency was thoroughly investigated in order to reduce the nitrogen deficiency. The magnetization measurements of a Mn3CuN0.86 thin film revealed a magnetic anisotropy that is consistent with the behavior of magnetostriction of this material. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:S314 / S317
页数:4
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