Influence of Excited Carriers on the Optical and Electronic Properties of MoS2

被引：219
作者：
Steinhoff, A. [1 ]
Roesner, M. [1 ,2 ]
Jahnke, F. [1 ]
Wehling, T. O. [1 ,2 ]
Gies, C. [1 ]
机构：
[1] Univ Bremen, Inst Theoret Phys, D-28334 Bremen, Germany
[2] Univ Bremen, Bremen Ctr Computat Mat Sci, D-28334 Bremen, Germany
来源：
NANO LETTERS | 2014年 / 14卷 / 07期
关键词：
Optical properties; MoS2; dichalcogenide; excitons; 2D materials; screened Coulomb matrix elements; excited carriers/doping; MONOLAYER; PHOTOLUMINESCENCE;
D O I：
10.1021/nl500595u
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We study the ground-state and finite-density optical response of molybdenum disulfide by solving the semiconductor Bloch equations, using ab initio band structures and Coulomb interaction matrix elements. Spectra for excited carrier densities up to 10(13) cm(-2) reveal a redshift of the excitonic ground-state absorption, whereas higher excitonic lines are found to disappear successively due to Coulomb-induced band gap shrinkage of more than 500 meV and binding-energy reduction. Strain-induced band variations lead to a redshift of the lowest exciton line by similar to 110 meV/% and change the direct transition to indirect while maintaining the magnitude of the optical response.
引用
收藏
页码：3743 / 3748
页数：6
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