Electrical characteristics of an organic bistable device using an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure

被引：17
作者：
Chang, Tzu-Yueh [1 ,2 ,3 ]
Cheng, You-Wei [1 ,3 ]
Lee, Po-Tsung [1 ,2 ,3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期
关键词：
electrical conductivity; molybdenum compounds; nanostructured materials; organic semiconductors; semiconductor storage; semiconductor thin films; space charge; NONVOLATILE MEMORY; THIN-FILM; POLYMER; CELLS;
D O I：
10.1063/1.3299265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of a device with an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq(3) thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO3 nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.
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页数：3
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