High-voltage Schottky diode on epitaxial diamond layer

被引：41

作者：

Ebert, W

Vescan, A

Gluche, P

Borst, T

Kohn, E

机构：

[1] Dept. of Electron Devices and Circt., University of Ulm, 89069 Ulm, Germany

来源：

关键词：

diamond films; Schottky diode; boron doping;

D O I：

10.1016/S0925-9635(96)00739-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Homoepitaxial diamond Schottky diodes with leakage current less than 10(-7) A cm(-2) up to the breakdown voltage of 90 V are discussed. Under forward voltage an exponential current increase over six orders of magnitude and an ideality factor of n<1.2 is observed. At elevated temperature, thermally activated reverse leakage currents are present as commonly observed, however breakdown is not degraded. The experiments allow to discuss design rules for high-voltage diamond Schottky diodes. (C) 1997 Elsevier Science S.A.

引用

页码：329 / 332

页数：4