Band offsets of InXGa1-xN/GaN quantum wells reestimated

被引：19

作者：

Biswas, Dipankar ^{[1
]}

Kumar, Subindu ^{[1
]}

Das, Tapas ^{[1
]}

机构：

[1] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, W Bengal, India

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 10期

关键词：

quantum wells; InGaN; photoluminescence;

D O I：

10.1016/j.tsf.2006.07.139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recently InxGa1-xN/GaN heterostructures and quantum wells (QWs) have gained immense importance in the application of III-V nitride materials. Reported values of the ratios of conduction band offset to valence band offset for InxGa1-xN/GaN QW structures, Delta E-c:Delta E-v, vary widely from 38:62 to 83:17. While trying to explain the unusual shifts in the photoluminescence (PL) spectra, obtained from InXGa1-xN/GaN QW structures, it has been found that a band offset ratio, Delta E-c:Delta E-v=55:45, explains all the experimental data precisely. In this paper detailed theories, procedures, results and discussions to establish the newly estimated band offsets will be presented. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：4488 / 4491

页数：4

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