Exact-exchange-based quasiparticle energy calculations for the band gap, effective masses, and deformation potentials of ScN

被引:100
作者
Qteish, Abdallah [1 ]
Rinke, Patrick
Scheffler, Matthias
Neugebauer, Joerg
机构
[1] Yarmouk Univ, Dept Phys, Irbid 21163, Jordan
[2] Fritz Haber Inst Max Planck Gesellsch, D-14195 Berlin, Germany
[3] MPI Eisenforsch, D-40237 Dusseldorf, Germany
关键词
D O I
10.1103/PhysRevB.74.245208
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The band gaps, longitudinal and transverse effective masses, and deformation potentials of ScN in the rock-salt structure have been calculated employing G(0)W(0)-quasiparticle calculations using exact-exchange Kohn-Sham density-functional theory one-particle wave functions and energies as input. Our quasiparticle gaps support recent experimental observations that ScN has a much lower indirect band gap than previously thought. The results are analyzed in terms of the influence of different approximations for exchange and correlation taken in the computational approach on the electronic structure of ScN.
引用
收藏
页数:8
相关论文
共 70 条
[11]   Composition-dependent structural properties in ScGaN alloy films:: A combined experimental and theoretical study -: art. no. 123501 [J].
Constantin, C ;
Haider, MB ;
Ingram, D ;
Smith, AR ;
Sandler, N ;
Sun, K ;
Ordejón, P .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (12)
[12]   ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase [J].
Constantin, C ;
Al-Brithen, H ;
Haider, MB ;
Ingram, D ;
Smith, AR .
PHYSICAL REVIEW B, 2004, 70 (19) :1-4
[13]   Comment on "Band-Gap problem in semiconductors revisited:: Effects of core states and many-body self-consistency" -: art. no. 249701 [J].
Delaney, K ;
García-González, P ;
Rubio, A ;
Rinke, P ;
Godby, RW .
PHYSICAL REVIEW LETTERS, 2004, 93 (24) :249701-1
[14]  
Dismukes JP, 1996, ELEC SOC S, V96, P110
[15]  
DISMUKES JP, 1971, J CRYST GROWTH, V13, P365
[16]  
EIBLER R, 1983, THEOR CHIM ACTA, V63, P133, DOI 10.1007/BF00548016
[17]   Properties of hexagonal ScN versus wurtzite GaN and InN [J].
Farrer, N ;
Bellaiche, L .
PHYSICAL REVIEW B, 2002, 66 (20) :2012031-2012034
[18]   Electronic structure of IIB-VI semiconductors in the GW approximation -: art. no. 045207 [J].
Fleszar, A ;
Hanke, W .
PHYSICAL REVIEW B, 2005, 71 (04)
[19]   Dielectric anisotropy in the GW space-time method [J].
Freysoldt, Christoph ;
Eggert, Philipp ;
Rinke, Patrick ;
Schindlmayr, Arno ;
Godby, R. W. ;
Scheffler, Matthias .
COMPUTER PHYSICS COMMUNICATIONS, 2007, 176 (01) :1-13
[20]   Ab initio pseudopotentials for electronic structure calculations of poly-atomic systems using density-functional theory [J].
Fuchs, M ;
Scheffler, M .
COMPUTER PHYSICS COMMUNICATIONS, 1999, 119 (01) :67-98