Measuring material softening with nanoscale spatial resolution using heated silicon probes

被引:118
作者
Nelson, B. A. [1 ]
King, W. P. [1 ]
机构
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2435589
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This article describes the use of heated silicon atomic force microscopy probes to perform local thermal analysis (LTA) of a thin film of polystyrene. The experiments measure film softening behavior with 100 nm spatial resolution, whereas previous research on LTA used probes that had a resolution near 10 mu m, which was too large to investigate some types of features. This article demonstrates four methods by which heated silicon probes can perform thermal analysis with nanoscale spatial resolution. The polystyrene softening temperature measured from nanoscale LTA techniques is 120 degrees C, compared to 100 degrees C, measured with bulk ellipsometry. The discrepancy is attributed to the thermal contact resistance at the end of the silicon probe tip, on the order of 10(7)K/W, which modulates heat flow between the tip and sample and governs the fundamental limits of this technique. The use of a silicon probe for LTA enables bulk fabrication, parallelization for high-throughput analysis, and fabrication of a sharp tip capable of nanoscale spatial resolution.(c) 2007 American Institute of Physics.
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页数:8
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