Influences of different oxidants on characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition

被引：0

作者：

Fan, Ji-Bin ^{[1
]}

Liu, Hong-Xia ^{[2
]}

Duan, Li ^{[1
]}

Zhang, Yan ^{[1
]}

Yu, Xiao-Chen ^{[1
]}

机构：

[1] Changan Univ, Sch Mat Sci & Engn, Xian 710061, Peoples R China

[2] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 06期

基金：

中国国家自然科学基金;

关键词：

La2O3/Al2O3; nanolaminates; atomic layer deposition; oxidants; annealing; LA2O3; FILMS; MOISTURE-ABSORPTION; LANTHANUM OXIDE; TRANSISTORS; WATER;

D O I：

10.1088/1674-1056/26/6/067701

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A comparative study of two kinds of oxidants (H2O and O-3) with the combination of two metal precursors (TMA and La(iPrCp)(3)) for atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates is carried out. The effects of different oxidants on the physical properties and electrical characteristics of La2O3/Al2O3 nanolaminates are studied. Initial testing results indicate that La2O3/Al2O3 nanolaminates could avoid moisture absorption in the air after thermal annealing. However, moisture absorption occurs in H2O-based La2O3/Al2O3 nanolaminates due to the residue hydroxyl/hydrogen groups during annealing. As a result, roughness enhancement, band offset variation, low dielectric constant and poor electrical characteristics are measured because the properties of H2O-based La2O3/Al2O3 nanolaminates are deteriorated. Addition thermal annealing effects on the properties of O-3-based La2O3/Al2O3 nanolaminates indicate that O-3 is a more appropriate oxidant to deposit La2O3/Al2O3 nanolaminates for electron devices application.

引用

页数：6

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