Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

被引：17
作者：
Syperek, M. [1 ]
Leszczynski, P. [1 ]
Misiewicz, J. [1 ]
Pavelescu, E. M. [2 ]
Gilfert, C. [2 ]
Reithmaier, J. P. [2 ]
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Univ Kassel, Inst Nanostruct Technol & Analyt, D-34132 Kassel, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期
关键词：
gallium arsenide; III-V semiconductors; indium compounds; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; time resolved spectra; tunnelling; LASERS;
D O I：
10.1063/1.3280384
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low temperature carrier dynamics in the InGaAs/GaAs quantum dot-based tunnel injection structure is studied by the time resolved photoluminescence experiment. We observed strongly modified photoluminescence kinetics between tunnel injection and reference quantum dot structures. Slowing down of the photoluminescence rise time in the tunnel injection system under weak and moderate excitation powers, we attributed to a fingerprint of a feeding process of quantum dot states with nonresonant carriers tunneling from the quantum well reservoir. We propose a simple three-level rate equation model to explain qualitatively the observed photoluminescence temporal behavior. Its result shows a good agreement with our experimental data.
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页数：3
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