Silicon-Carbide Epitaxial Structures for Betavoltaic Converters

被引：1

作者：

Ilyin, V. A. ^{[1
]}

Afanasyev, A. V. ^{[1
]}

Luchinin, V. V. ^{[1
]}

Chigirev, D. A. ^{[1
]}

Serkov, A. V. ^{[1
]}

机构：

[1] St Petersburg State Electrotech Univ ETU LETI, St Petersburg 197376, Russia

来源：

NANOBIOTECHNOLOGY REPORTS | 2022年 / 17卷 / SUPPL 1期

关键词：

betavoltaic converter (BVC); silicon carbide; epitaxial structure; p; n diode;

D O I：

10.1134/S2635167622070096

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A physical and technological analysis of silicon-carbide epitaxial structures as the basic components of betavoltaic converters (BVC) is carried out. The main factors limiting the efficiency of SiC-BVCs are determined. It is shown that in order to provide the required level of electric power for an actually long-term inexhaustible energy source, it is necessary to use series-parallel hybrid circuits of large-area betavoltaic multichip converters.

引用

页码：S56 / S60

页数：5

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