EFFECT OF Zn CONCENTRATION ON THE STRUCTURAL, MORPHOLOGICAL AND OPTICAL PROPERTIES OF TERNARY ZnCdS NANOCRYSTALLINE THIN FILMS

A technological challenge is to develop a ternary semiconductor ZnCdS thin film by controlling the concentration of Zn changes (X=0.2, 0.3, 0.4 and 0.5) in non aqueous medium that allows us to tune the band gap energy between 2.54 - 2.85 eV. In this paper, ZnCdS (X=0.2, 0.3, 0.4 and 0.5) films were deposited on molybdenum substrate containing ZnCl2, CdCl2, thiourea in 40ml of ethyleneglycol. The optimal bath temperature was maintained at 160 C-0. The structural, morphological, compositional analysis and optical properties of different concentration of deposited ZnCdS thin films were studied by XRD, FESEM, EDS, UV-VIS, PL and FTIR. X-ray diffraction study showed that all the films have wurtzite structure with (002) plane. Grain size has been calculated by using Scherrer formula and is to be 30nm to 23nm. With increase in Zn concentration the optical energy band gap of ZnCdS films varied from 2.54eV to 2.85eV and photoluminescence emission at around 350 nm and 550 nm.