Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams

被引:134
作者
Gu, Qian
Falk, Abram
Wu, Junqiao
Lian Ouyang
Park, Hongkun
机构
[1] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
关键词
D O I
10.1021/nl0624768
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for similar to 1 mu m long devices. The M-I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs through the axial drift of a single M-I domain wall driven by Joule heating and the Peltier effect.
引用
收藏
页码:363 / 366
页数:4
相关论文
共 27 条
[1]   Dynamical singlets and correlation-assisted peierls transition in VO2 -: art. no. 026404 [J].
Biermann, S ;
Poteryaev, A ;
Lichtenstein, AI ;
Georges, A .
PHYSICAL REVIEW LETTERS, 2005, 94 (02) :1-4
[2]   Theoretical metastability of semiconductor crystallites in high-pressure phases, with application to beta-tin structure silicon [J].
Brus, LE ;
Harkless, JAW ;
Stillinger, FH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1996, 118 (20) :4834-4838
[3]   NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALS [J].
BULLOCK, DC ;
EPSTEIN, DJ .
APPLIED PHYSICS LETTERS, 1970, 17 (05) :199-&
[4]   Size dependence of structural metastability in semiconductor nanocrystals [J].
Chen, CC ;
Herhold, AB ;
Johnson, CS ;
Alivisatos, AP .
SCIENCE, 1997, 276 (5311) :398-401
[5]  
Christian JW., 1965, THEORY TRANSFORMATIO
[6]  
Eyert V, 2002, ANN PHYS-BERLIN, V11, P650, DOI 10.1002/1521-3889(200210)11:9<650::AID-ANDP650>3.0.CO
[7]  
2-K
[8]   MOVING BOUNDARIES AND TRAVELING DOMAINS DURING SWITCHING OF VO2 SINGLE-CRYSTALS [J].
FISHER, B .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (13) :2072-&
[9]   VOLTAGE OSCILLATIONS IN SWITCHING VO2 NEEDLES [J].
FISHER, B .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5339-5341
[10]   METAL-SEMICONDUCTOR DOMAIN CONFIGURATIONS DURING SWITCHING OF VO-2 SINGLE-CRYSTALS [J].
FISHER, B .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (07) :1201-1209