Controlling the size of InAs quantum dots on Si1-xGex/Si(001) by metalorganic vapor-phase epitaxy

被引：0

作者：

Kawaguchi, Kenichi ^{[1
]}

Ebe, Hiroji ^{[2
]}

Ekawa, Mitsuru ^{[1
]}

Sugama, Akio ^{[2
]}

Arakawa, Yasuhiko ^{[2
,3
,4
]}

机构：

[1] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

[2] Univ Tokyo, INQIE, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Tokyo, IIS, Meguro Ku, Tokyo 1538505, Japan

[4] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538505, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 165卷 / 1-2期

关键词：

InAs quantum dots; SiGe buffer layers; Metalorganic vapor-phase epitaxy; OPTICAL-PROPERTIES; SURFACES; GROWTH;

D O I：

10.1016/j.mseb.2008.10.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of III-V InAs quantum dots (QDs) on group-IV Si1-xGex/Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 x 10(10) cm(-2) were obtained. (C) 2008 Elsevier B.V. All rights reserved.

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页码：103 / 106

页数：4

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