Study of structural, electrical, and optical properties of nickel-doped tin selenide crystals

被引：2

作者：

Solanki, G. K. ^{[1
]}

Chauhan, I. L. ^{[1
]}

Patel, K. D. ^{[1
]}

机构：

[1] Near Univ Circle, Sardar Patel Univ, Dept Phys, Vallabh Vidhyanagar 388120, Gujarat, India

来源：

CANADIAN JOURNAL OF PHYSICS | 2016年 / 94卷 / 02期

关键词：

X-ray diffraction (XRD); energy dispersive analysis of X-rays (EDAX); thermoelectric power (TEP); UV-visible spectroscopy; Hall effect; ABSORPTION-EDGE; THIN-FILMS; CONDUCTIVITY; REFINEMENT; GROWTH;

D O I：

10.1139/cjp-2015-0279

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nickel-doped tin selenide crystals can be grown using the direct vapour transport technique. This paper includes structural, electrical, and optical characterizations of SnSeNi0.2 crystals done by X-ray diffraction (XRD), energy-dispersive analysis of X-rays (EDAX), surface microstructure topography, Hall effect measurement carried out to determine type of material, Seebeck coefficient and calculation of power factor has been carried out from the data of thermoelectric power measurements and the ultraviolet-visible (UV-Vis) spectroscopic technique, respectively. The optical absorption spectrum was obtained in an UV-Vis-near-infrared (NIR) spectrometer in the range of 200-2500 nm. The UV-Vis spectroscopic technique has been used to calculate band gap, and the value of the band gap was found to be 0.84 eV in the visible region. Calculation of various optical parameters has been carried out.

引用

页码：212 / 217

页数：6

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