Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

被引:186
作者
Borri, P
Langbein, W
Schneider, S
Woggon, U
Sellin, RL
Ouyang, D
Bimberg, D
机构
[1] Univ Dortmund, D-44221 Dortmund, Germany
[2] Inst Festkorperphys TU, D-10623 Berlin, Germany
关键词
D O I
10.1103/PhysRevB.66.081306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present measurements and calculations of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparisons with calculations show that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.
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页码:1 / 4
页数:4
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