Spin-polarized scanning tunneling microscopy using optically pumped GaAs tips

被引：1

作者：

Miura, T ^{[1
]}

Yamaguchi, K ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 6B期

关键词：

spin-polarized scanning tunneling microscopy; GaAs; Ni; spin polarization; lifetime; spin relaxation time;

D O I：

10.1143/JJAP.41.4382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin-dependent tunneling current between a Ni-thin-film sample and a fabricated GaAs microtip was successfully observed by spin-polarized scanning tunneling microscopy using horizontally Pumped light. Asymmetry de's than about 10% of the tunneling current due to a change in circular polarization was repeatedly observed at the tip bias voltage of -0.5 similar to -1.8V From result,, of time-resolved polarized photoluminescence experiments, it was found that electron spin polarization of the photoexcited GaAs microtip is about 11% under the steady state. which Supports the observed as asymmetry Of the tunneling current.

引用

页码：4382 / 4384

页数：3

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