Spin-polarized scanning tunneling microscopy using optically pumped GaAs tips

被引：1
|
作者：
Miura, T [1 ]
Yamaguchi, K [1 ]
机构：
[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 6B期
关键词：
spin-polarized scanning tunneling microscopy; GaAs; Ni; spin polarization; lifetime; spin relaxation time;
D O I：
10.1143/JJAP.41.4382
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spin-dependent tunneling current between a Ni-thin-film sample and a fabricated GaAs microtip was successfully observed by spin-polarized scanning tunneling microscopy using horizontally Pumped light. Asymmetry de's than about 10% of the tunneling current due to a change in circular polarization was repeatedly observed at the tip bias voltage of -0.5 similar to -1.8V From result,, of time-resolved polarized photoluminescence experiments, it was found that electron spin polarization of the photoexcited GaAs microtip is about 11% under the steady state. which Supports the observed as asymmetry Of the tunneling current.
引用
收藏
页码：4382 / 4384
页数：3
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