Synthesis of nanocrystals by discharges in liquid nitrogen from Si-Sn sintered electrode

被引:17
作者
Kabbara, H. [1 ]
Noel, C. [2 ]
Ghanbaja, J. [1 ]
Hussein, K. [3 ]
Mariotti, D. [4 ]
Svrcek, V. [5 ]
Belmonte, T. [2 ]
机构
[1] Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54042 Nancy, France
[2] CNRS, UMR 7198, Inst Jean Lamour, F-54042 Nancy, France
[3] Lebanese Univ, Dept Appl Phys, Fac Sci, Sect 3, Tripoli, Libya
[4] Univ Ulster, NIBEC, Newtownabbey BT37 0QB, North Ireland
[5] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta Technol, Tsukuba, Ibaraki 3058568, Japan
基金
英国工程与自然科学研究理事会;
关键词
ARC-DISCHARGE; SILICON; NANOPARTICLES;
D O I
10.1038/srep17477
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The synthesis feasibility of silicon-tin nanocrystals by discharges in liquid nitrogen is studied using a Si-10 at % Sn sintered electrode. Time-resolved optical emission spectroscopy shows that silicon and tin melt almost simultaneously. The presence of both vapours does not lead to the synthesis of alloyed nanocrystals but to the synthesis of separate nanocrystals of silicon and tin with average sizes of 10 nm. These nanocrystals are transformed into amorphous silicon oxide (am-SiO2) and beta-SnO2 by air oxidation, after evaporation of the liquid nitrogen. The synthesis of an am-Si0.95Sn0.05 phase around large silicon crystals (similar to 500 nm) decorated by beta-Sn spheroids is achieved if the current flowing through electrodes is high enough. When the sintered electrode is hit by powerful discharges, some grains are heated and tin diffuses in the large silicon crystals. Next, these grains are shelled and fall into the dielectric liquid.
引用
收藏
页数:8
相关论文
共 21 条
[1]   STUDY OF TIN DIFFUSION INTO SILICON BY BACKSCATTERING ANALYSIS [J].
AKASAKA, Y ;
HORIE, K ;
NAKAMURA, G ;
TSUKAMOTO, K ;
YUKIMOTO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) :1533-1540
[2]   Synthesis and photocatalytic activity of WO3 nanoparticles prepared by the arc discharge method in deionized water [J].
Ashkarran, A. A. ;
zad, A. Iraji ;
Ahadian, M. M. ;
Ardakani, S. A. Mahdavi .
NANOTECHNOLOGY, 2008, 19 (19)
[3]   Preparation of Co/Ag nanocompound fluid using ASNSS with aid of ultrasonic orthogonal vibration [J].
Chang, Ho ;
Kao, Mu-Jung ;
Jwo, Ching-Song ;
Kuo, Chin-Guo ;
Yeh, Yu-Hsuan ;
Tzeng, Wei-Cheng .
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 504 :S376-S379
[4]   Plasma of Arc Discharge in Water for the Formation of Diverse Nanostructures Dependent on the Anode Material [J].
Delaportas, Dimitrios ;
Svarnas, Panagiotis ;
Alexandrou, Ioannis ;
Hall, Stephen .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2011, 39 (11) :2628-2629
[5]   THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].
GLASSBRENNER, CJ ;
SLACK, GA .
PHYSICAL REVIEW, 1964, 134 (4A) :1058-+
[6]   Plasma-surface interaction in heptane [J].
Hamdan, A. ;
Kosior, F. ;
Noel, C. ;
Henrion, G. ;
Audinot, J-N ;
Gries, T. ;
Belmonte, T. .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (21)
[7]   Comparison of Aluminium Nanostructures Created by Discharges in Various Dielectric Liquids [J].
Hamdan, Ahmad ;
Noel, Cedric ;
Ghanbaja, Jaafar ;
Belmonte, Thierry .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 2014, 34 (05) :1101-1114
[8]   Quasiparticle electronic and optical properties of the Si-Sn system [J].
Jensen, Rasmus V. S. ;
Pedersen, Thomas G. ;
Larsen, Arne N. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (34)
[9]   Electronic structure of ordered silicon alloys: Direct-gap systems [J].
Johnson, KA ;
Ashcroft, NW .
PHYSICAL REVIEW B, 1996, 54 (20) :14480-14486
[10]   THERMAL AND ELECTRICAL CONDUCTIVITY OF PURE TIN FROM 4.5 TO 77 DEGREE K [J].
KARAMARG.MC ;
KLEMENS, PG ;
LIPSCHUL.FP ;
REYNOLDS, CA .
PHYSICAL REVIEW B, 1972, 5 (08) :2856-&