Preparation of a CVD thin film by an atmospheric pressure low temperature surface discharge plasma torch

被引：9
|
作者：
Kuwabara, Atsushi [1 ]
Kuroda, Shin-ichi [1 ]
Kubota, Hitoshi [1 ]
机构：
[1] Gunma Univ, Fac Engn, Dept Chem, Gunma 3768515, Japan
来源：
PLASMA SOURCES SCIENCE & TECHNOLOGY | 2006年 / 15卷 / 03期
关键词：
D O I：
10.1088/0963-0252/15/3/005
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
We describe the preparation of a chemical vapour deposition (CVD) thin film using the low temperature surface discharge plasma torch of our previous paper, and examine the influences of preparation distance, applied voltage and preparation time on the thin film structure. The composition of the obtained CVD thin film was altered by the applied voltage and preparation distance, and it was made from an inorganic composition with a state of SiO2 under a high-applied voltage and long preparation distance.
引用
收藏
页码：328 / 331
页数：4
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