Preparation of a CVD thin film by an atmospheric pressure low temperature surface discharge plasma torch

被引：9

作者：

Kuwabara, Atsushi ^{[1
]}

Kuroda, Shin-ichi ^{[1
]}

Kubota, Hitoshi ^{[1
]}

机构：

[1] Gunma Univ, Fac Engn, Dept Chem, Gunma 3768515, Japan

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 2006年 / 15卷 / 03期

关键词：

D O I：

10.1088/0963-0252/15/3/005

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

We describe the preparation of a chemical vapour deposition (CVD) thin film using the low temperature surface discharge plasma torch of our previous paper, and examine the influences of preparation distance, applied voltage and preparation time on the thin film structure. The composition of the obtained CVD thin film was altered by the applied voltage and preparation distance, and it was made from an inorganic composition with a state of SiO2 under a high-applied voltage and long preparation distance.

引用

页码：328 / 331

页数：4

共 9 条

[1]

ADAMS AC, 1986, REDUCED TEMPERATURE

[2] The influence of electrode geometry and gas flow on corona-to-glow and glow-to-spark threshold currents in air [J].

Akishev, Y ;

Goossens, O ;

Callebaut, T ;

Leys, C ;

Napartovich, A ;

Trushkin, N .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (18) :2875-2882

[3] Deposition of silicon dioxide films with an atmospheric-pressure plasma jet [J].

Babayan, SE ;

Jeong, JY ;

Tu, VJ ;

Park, J ;

Selwyn, GS ;

Hicks, RF .

PLASMA SOURCES SCIENCE & TECHNOLOGY, 1998, 7 (03) :286-288

[4] LOW-PRESSURE DEPOSITION OF HIGH-QUALITY SIO2-FILMS BY PYROLYSIS OF TETRAETHYLORTHOSILICATE [J].

BECKER, FS ;

PAWLIK, D ;

ANZINGER, H ;

SPITZER, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1555-1563

[5]

KURODA S, 2004, Patent No. 2005322416

[6] Effects of electrode positioning on the atmospheric-pressure DBD plasma torch [J].

Kuwabara, A ;

Kuroda, S ;

Kubota, H .

PLASMA PROCESSES AND POLYMERS, 2005, 2 (04) :305-309

[7] KINETICS AND MECHANISM OF SILICON DIOXIDE DEPOSITION THROUGH THERMAL PYROLYSIS OF TETRAETHOXYSILANE [J].

RAUPP, GB ;

SHEMANSKY, FA ;

CALE, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2422-2430

[8]

TAMURA K, 2004, MAT LIFE SOC JAPAN, V12, P15

[9] Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films [J].

Yasuda, N ;

Takagi, S ;

Toriumi, A .

APPLIED SURFACE SCIENCE, 1997, 117 :216-220

← 1 →