Development and verification of a new non-linear Mosfet model

被引：0

作者：

Romdane, H ^{[1
]}

Bergeault, E ^{[1
]}

Huyart, B ^{[1
]}

机构：

[1] Ecole Natl Super Telecommun Bretagne, Dep COMELEC CNRS URA 820, F-75634 Paris 13, France

来源：

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年

关键词：

D O I：

10.1109/RFIC.2002.1012098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new non-linear model of SiMOSFET transistor based on a device characterization using DC and small-signal scattering parameter measurements is proposed. It is shown that interpolation of measured data and look up tables provide an extensive description of the: extrinsic and intrinsic MOSFET non-linearities. Model verification is achieved by comparing simulations and on-wafer measurements of S parameters at a typical bias point.

引用

页码：487 / 489

页数：3

共 4 条

[1] ANGELO I, 1996, IEEE T MICROW THEORY, V40, P2258
[2] Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
Chan, YJ
Huang, CH
Weng, CC
Liew, BK
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (05) : 611 - 615
[3] A novel approach to extracting small-signal model parameters of silicon MOSFET's
Lee, S
Yu, HK
Kim, CS
Koo, JG
Nam, KS
[J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (03): : 75 - 77
[4] LOVELACE D, 1994, IEEE MTT-S, P865, DOI 10.1109/MWSYM.1994.335220

← 1 →