Bias-Polarity Dependent Ultraviolet/Visible Switchable Light-Emitting Devices

被引：11
作者：
Ni, Pei-Nan [1 ,2 ]
Shan, Chong-Xin [1 ]
Li, Bing-Hui [1 ]
Wang, Shuang-Peng [1 ]
Shen, De-Zhen [1 ]
机构：
[1] Chinese Acad Sci, State Key Lab Luminescence & Applicat, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 11期
关键词：
ultraviolet; light-emitting devices; wide-band-gap semiconductors; color-switchable; accelerated electrons; magnesium zinc oxide; BAND-GAP; DIODE; EFFICIENT; FABRICATION; EPITAXY; QUALITY;
D O I：
10.1021/am5010283
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
By taking semiconductors with different band-gap energies as the active layers and controlling the electron hole recombination region through the electric field, bias-polarity dependent ultraviolet/visible switchable light-emitting devices have been realized in Au/MgO/Mg0.49Zn0.51O/MgxZn1-xO/n-ZnO structures, of which the emission bands can be switched from the ultraviolet region to the orange region by changing the polarity of the applied bias. The results reported here may provide a feasible idea to multicolor-switchable light-emitting devices.
引用
收藏
页码：8257 / 8262
页数：6
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