Tuning Phase Transition and Thermochromic Properties of Vanadium Dioxide Thin Films via Cobalt Doping

被引:24
|
作者
Geng, Xun [1 ]
Chang, Tianci [2 ]
Fan, Jiaxin [1 ]
Wang, Yu [1 ]
Wang, Xiaotian [3 ]
Sun, Yunlong [1 ]
Selvarajan, Premkumar [4 ]
Liu, Chuang [1 ]
Lin, Chun-Ho [1 ]
Wang, Xiaolin [3 ]
Yang, Jack [1 ]
Cheng, Zhenxiang [3 ]
Kalantar-Zadeh, Kourosh [5 ]
Cao, Xun [2 ]
Wang, Danyang [1 ]
Vinu, Ajayan [4 ]
Yi, Jiabao [4 ]
Wu, Tom [1 ]
机构
[1] Univ New South Wales UNSW, Sch Mat Sci & Engn, Sydney, NSW 2033, Australia
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[3] Univ Wollongong, Inst Superconducting & Elect Mat ISEM, Australia Inst Innovat Mat, Innovat Campus, North Wollongong, NSW 2500, Australia
[4] Univ Newcastle, Global Innovat Ctr Adv Nanomat, Sch Engn, Callaghan, NSW 2308, Australia
[5] Univ New South Wales UNSW, Sch Chem Engn, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会; 中国国家自然科学基金;
关键词
vanadium dioxide; cobalt doping; Raman spectroscopy; phase transition; luminous transmittance; METAL-INSULATOR-TRANSITION; ENHANCED VISIBLE TRANSMITTANCE; SOLAR MODULATION ABILITY; VO2; NANOPARTICLES; TEMPERATURE; PERFORMANCE; SEMICONDUCTOR; TUNGSTEN; FACILE;
D O I
10.1021/acsami.2c03113
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Vanadium dioxide (VO2) featuring a distinct thermally triggered phase transition is regarded as the most attractive thermochromic material for smart window applications. However, the high transition temperature (similar to 67 degrees C) and moderate luminous transmittance (<50%) of the pristine VO2 circumvent room temperature applications. In this work, epitaxial cobalt-doped VO2 thin films were fabricated to tailor the electric and optical properties on a c-plane sapphire substrate. At the highest doping concentration of 10%, the transition temperature of VO2 is reduced to 44 degrees C, accompanied by a high luminous transmittance of 79% for single-element Co-doped VO2 . The roles of cobalt doping and detailed band variation are fully explained experimentally and by modeling (DFT calculation), respectively. Furthermore, the dramatically increased carrier concentration in cobalt-doped VO2 underscores the promising future of cobalt-doped VO2 unveiled by temperature-dependent Hall effect measurement.
引用
收藏
页码:19736 / 19746
页数:11
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